- Manufacture :
- Series :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
769
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 1.8A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3W (Ta), 20W (Tc) | P-Channel | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 10V | ±20V | ||||
VIEW |
1,646
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 1.8A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3W (Ta), 20W (Tc) | P-Channel | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 10V | ±20V | ||||
VIEW |
2,435
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 1.8A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 10V | ±20V | ||||
VIEW |
1,880
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 2.4A 6-TSOP | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(TSOP-6) | 1.7W (Ta) | P-Channel | 30V | 2.4A (Ta) | 180 mOhm @ 1.6A, 10V | 1V @ 250µA | 11nC @ 10V | 170pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
1,087
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 2.4A 6-TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(TSOP-6) | 1.7W (Ta) | P-Channel | 30V | 2.4A (Ta) | 180 mOhm @ 1.6A, 10V | 1V @ 250µA | 11nC @ 10V | 170pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
2,119
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 2.4A 6-TSOP | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(TSOP-6) | 1.7W (Ta) | P-Channel | 30V | 2.4A (Ta) | 180 mOhm @ 1.6A, 10V | 1V @ 250µA | 11nC @ 10V | 170pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
3,537
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 1.8A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3W (Ta), 20W (Tc) | P-Channel | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 10V | ±20V | ||||
VIEW |
1,885
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 1.8A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 20W (Tc) | P-Channel | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 10V | ±20V |