Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AOI11S60
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RFQ
2,589
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 11A TO251A aMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251A 208W (Tc) N-Channel 600V 11A (Tc) 399 mOhm @ 3.8A, 10V 4.1V @ 250µA 11nC @ 10V 545pF @ 100V 10V ±30V
AOI2N60
RFQ
VIEW
RFQ
2,692
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 2A TO251A - Active Tube MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251A 56.8W (Tc) N-Channel 600V 2A (Tc) 4.4 Ohm @ 1A, 10V 4.5V @ 250µA 11nC @ 10V 325pF @ 25V 10V ±30V
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RFQ
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RFQ
812
In-stock
ON Semiconductor SUPERFET3 650V IPAK PKG SuperFET® III Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 54W (Tc) N-Channel 650V 6A (Tc) 600 mOhm @ 3A, 10V 4.5V @ 600µA 11nC @ 10V 465pF @ 400V 10V ±30V
TK6Q65W,S1Q
RFQ
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RFQ
2,940
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 650V 5.8A IPAK-OS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 60W (Tc) N-Channel 650V 5.8A (Ta) 1.05 Ohm @ 2.9A, 10V 3.5V @ 180µA 11nC @ 10V 390pF @ 300V 10V ±30V
AOY2N60
RFQ
VIEW
RFQ
2,366
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH - Active Tube MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251 57W (Tc) N-Channel 600V 2A (Tc) 4.7 Ohm @ 1A, 10V 4.5V @ 250µA 11nC @ 10V 295pF @ 25V 10V ±30V
AOI2N60A
RFQ
VIEW
RFQ
881
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 2A - Active Tube MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251A 57W (Tc) N-Channel 600V 2A (Tc) 4.7 Ohm @ 1A, 10V 4.5V @ 250µA 11nC @ 10V 295pF @ 25V 10V ±30V
IPS80R1K2P7AKMA1
RFQ
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RFQ
1,957
In-stock
Infineon Technologies MOSFET N-CH 800V 4.5A TO251-3 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 37W (Tc) N-Channel 800V 4.5A (Tc) 1.2 Ohm @ 1.7A, 10V 3.5V @ 80µA 11nC @ 10V 300pF @ 500V 10V ±20V