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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	AOU2N60	RFQ VIEW	PDF RFQ	1,801 In-stock	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 2A TO251		-	Active	Tube	MOSFET (Metal Oxide)	-50°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3	56.8W (Tc)	N-Channel	600V	2A (Tc)	4.4 Ohm @ 1A, 10V	4.5V @ 250µA	11nC @ 10V	325pF @ 25V	10V	±30V
	IPU80R1K2P7AKMA1	RFQ VIEW	PDF RFQ	1,942 In-stock	Infineon Technologies	MOSFET N-CH 800V 4.5A TO251-3		CoolMOS™ P7	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	PG-TO251-3	37W (Tc)	N-Channel	800V	4.5A (Tc)	1.2 Ohm @ 1.7A, 10V	3.5V @ 80µA	11nC @ 10V	300pF @ 500V	10V	±20V
	STU4N52K3	RFQ VIEW	PDF RFQ	1,096 In-stock	STMicroelectronics	MOSFET N-CH 525V 2.5A IPAK		SuperMESH3™	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	45W (Tc)	N-Channel	525V	2.5A (Tc)	2.6 Ohm @ 1.25A, 10V	4.5V @ 50µA	11nC @ 10V	334pF @ 100V	10V	±30V
	IRFU014PBF	RFQ VIEW	PDF RFQ	1,758 In-stock	Vishay Siliconix	MOSFET N-CH 60V 7.7A I-PAK		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251AA	2.5W (Ta), 25W (Tc)	N-Channel	60V	7.7A (Tc)	200 mOhm @ 4.6A, 10V	4V @ 250µA	11nC @ 10V	300pF @ 25V	10V	±20V

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