- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
-
- 1.3W (Ta) (1)
- 150W (Tc) (1)
- 151W (Tc) (2)
- 178W (Tc) (2)
- 1W (Tc) (2)
- 2.5W (Ta), 25W (Tc) (1)
- 208W (Tc) (1)
- 20W (Tc) (1)
- 24W (Tc) (1)
- 25W (Tc) (1)
- 27W (Tc) (1)
- 28W (Tc) (2)
- 3.7W (Ta), 43W (Tc) (1)
- 30W (Tc) (1)
- 35W (Tc) (10)
- 37W (Tc) (3)
- 38W (Tc) (2)
- 43W (Tc) (2)
- 45W (Tc) (2)
- 54W (Tc) (2)
- 56.8W (Tc) (2)
- 57W (Tc) (2)
- 60W (Tc) (1)
- 62W (Tc) (1)
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
-
- 1.1A (Tc) (2)
- 1.7A (Ta) (1)
- 1.8A (Tc) (2)
- 10A (Tc) (3)
- 11A (Tc) (6)
- 2.5A (Ta) (1)
- 2.5A (Tc) (2)
- 20.2A (Tc) (2)
- 20.3A (Tc) (1)
- 2A (Tc) (5)
- 3.5A (Ta) (1)
- 3.7A (Ta) (1)
- 3A (Ta) (1)
- 4.5A (Tc) (4)
- 4A (Ta) (2)
- 5.5A (Ta) (1)
- 5.8A (Ta) (2)
- 5A (Ta) (3)
- 6.5A (Ta) (1)
- 6A (Ta) (1)
- 6A (Tc) (3)
- 7.7A (Tc) (1)
- 8A (Tc) (2)
- Rds On (Max) @ Id, Vgs :
-
- 1 Ohm @ 2.9A, 10V (1)
- 1.05 Ohm @ 2.9A, 10V (1)
- 1.2 Ohm @ 1.7A, 10V (4)
- 1.2 Ohm @ 3.3A, 10V (1)
- 1.35 Ohm @ 2.8A, 10V (1)
- 1.4 Ohm @ 3A, 10V (1)
- 1.5 Ohm @ 2.5A, 10V (2)
- 1.7 Ohm @ 2.5A, 10V (1)
- 1.7 Ohm @ 2A, 10V (1)
- 1.88 Ohm @ 2A, 10V (1)
- 190 mOhm @ 7.6A, 10V (2)
- 2 Ohm @ 1.9A, 10V (1)
- 2.2 Ohm @ 1.8A, 10V (1)
- 2.25 Ohm @ 1.5A, 10V (1)
- 2.51 Ohm @ 1.3A, 10V (1)
- 2.6 Ohm @ 1.25A, 10V (2)
- 200 mOhm @ 1A, 10V (1)
- 200 mOhm @ 4.6A, 10V (1)
- 200 mOhm @ 4.8A, 10V (1)
- 200 mOhm @ 6A, 10V (3)
- 3 Ohm @ 900mA, 10V (2)
- 399 mOhm @ 3.8A, 10V (6)
- 4.4 Ohm @ 1A, 10V (2)
- 4.7 Ohm @ 1A, 10V (2)
- 450 mOhm @ 4A, 10V (1)
- 500 mOhm @ 580mA, 10V (2)
- 6.3 Ohm @ 1A, 10V (1)
- 600 mOhm @ 3A, 10V (3)
- 75 mOhm @ 10A, 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
48 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
2,924
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 3.7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 600V | 3.7A (Ta) | 2 Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,941
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 4A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 550V | 4A (Ta) | 1.88 Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,894
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 525V 4A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 525V | 4A (Ta) | 1.7 Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
1,887
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 3.5A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | - | N-Channel | 600V | 3.5A (Ta) | 2.2 Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,435
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 1.8A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
VIEW |
900
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO220F | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 38W (Tc) | N-Channel | 600V | 11A (Tc) | 399 mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | 545pF @ 100V | 10V | ±30V | |||
|
VIEW |
2,131
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO262F | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | - | 28W (Tc) | N-Channel | 600V | 11A (Tc) | 399 mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | 545pF @ 100V | 10V | ±30V | |||
|
VIEW |
2,289
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 178W (Tc) | N-Channel | 600V | 11A (Tc) | 399 mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | 545pF @ 100V | 10V | ±30V | |||
|
|
VIEW |
3,081
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO220F | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 38W (Tc) | N-Channel | 600V | 11A (Tc) | 399 mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | 545pF @ 100V | 10V | ±30V | |||
|
|
VIEW |
3,594
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 10A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 3.7W (Ta), 43W (Tc) | N-Channel | 60V | 10A (Tc) | 200 mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,777
In-stock
|
IXYS | MOSFET N-CH | HiPerFET™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 150W (Tc) | N-Channel | 650V | 8A (Tc) | 450 mOhm @ 4A, 10V | 5V @ 250µA | 11nC @ 10V | 790pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,410
In-stock
|
ON Semiconductor | SUPERFET3 650V TO220 PKG | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 54W (Tc) | N-Channel | 650V | 6A (Tc) | 600 mOhm @ 3A, 10V | 4.5V @ 600µA | 11nC @ 10V | 465pF @ 400V | 10V | ±30V | |||
|
|
VIEW |
2,662
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 6.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 450V | 6.5A (Ta) | 1.2 Ohm @ 3.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
3,671
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 550V | 5A (Ta) | 1.7 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
816
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 6A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 500V | 6A (Ta) | 1.4 Ohm @ 3A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,952
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 525V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 525V | 5A (Ta) | 1.5 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,616
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 10A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 43W (Tc) | N-Channel | 60V | 10A (Tc) | 200 mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
729
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 5.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | - | N-Channel | 450V | 5.5A (Ta) | 1.35 Ohm @ 2.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,292
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 5A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 500V | 5A (Ta) | 1.5 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,589
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO251A | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TO-251A | 208W (Tc) | N-Channel | 600V | 11A (Tc) | 399 mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | 545pF @ 100V | 10V | ±30V | |||
|
|
VIEW |
2,692
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 2A TO251A | - | Active | Tube | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TO-251A | 56.8W (Tc) | N-Channel | 600V | 2A (Tc) | 4.4 Ohm @ 1A, 10V | 4.5V @ 250µA | 11nC @ 10V | 325pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
812
In-stock
|
ON Semiconductor | SUPERFET3 650V IPAK PKG | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 54W (Tc) | N-Channel | 650V | 6A (Tc) | 600 mOhm @ 3A, 10V | 4.5V @ 600µA | 11nC @ 10V | 465pF @ 400V | 10V | ±30V | |||
|
VIEW |
640
In-stock
|
Infineon Technologies | MOSFET N-CH 800V 4.5A TO220-3 | CoolMOS™ P7 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 37W (Tc) | N-Channel | 800V | 4.5A (Tc) | 1.2 Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | 300pF @ 500V | 10V | ±20V | |||
|
VIEW |
696
In-stock
|
Infineon Technologies | MOSFET N-CH 800V 4.5A TO220 | CoolMOS™ P7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220 Full Pack | 25W (Tc) | N-Channel | 800V | 4.5A (Tc) | 1.2 Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | 300pF @ 500V | 10V | ±20V | |||
|
VIEW |
1,889
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 55V 20.3A TO220AB | TrenchMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 62W (Tc) | N-Channel | 55V | 20.3A (Tc) | 75 mOhm @ 10A, 10V | 4V @ 1mA | 11nC @ 10V | 483pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,349
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 1.7A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 1.7A (Ta) | 200 mOhm @ 1A, 10V | 4V @ 250µA | 11nC @ 10V | 310pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,619
In-stock
|
ON Semiconductor | MOSFET N-CH 700V 2A TO-220F | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 28W (Tc) | N-Channel | 700V | 2A (Tc) | 6.3 Ohm @ 1A, 10V | 5V @ 250µA | 11nC @ 10V | 350pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,948
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | 650V | 5.8A (Ta) | 1 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,940
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A IPAK-OS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | 650V | 5.8A (Ta) | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,051
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 3A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 650V | 3A (Ta) | 2.25 Ohm @ 1.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | 10V | ±30V | |||
