- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,651
In-stock
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Infineon Technologies | MOSFET N-CH 200V 24A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 96W (Tc) | N-Channel | 200V | 24A (Tc) | 50 mOhm @ 22A, 10V | 4V @ 60µA | 15nC @ 10V | 1580pF @ 100V | 10V | ±20V | |||
|
VIEW |
913
In-stock
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Rohm Semiconductor | MOSFET N-CH 200V 12A LPT | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS (SC-83) | 1.56W (Ta), 40W (Tc) | N-Channel | 200V | 12A (Tc) | 325 mOhm @ 6A, 10V | 5.25V @ 1mA | 15nC @ 10V | 740pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,336
In-stock
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Rohm Semiconductor | NCH 200V 7.5A POWER MOSFET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 52W (Tc) | N-Channel | 200V | 7.5A (Tc) | 325 mOhm @ 3.75A, 10V | 5.25V @ 1mA | 15nC @ 10V | 755pF @ 25V | 10V | ±30V | |||
