Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STQ2HNK60ZR-AP
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2,954
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STMicroelectronics MOSFET N-CH 600V 0.5A TO-92 SuperMESH™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 3W (Tc) N-Channel - 600V 500mA (Tc) 4.8 Ohm @ 1A, 10V 4.5V @ 50µA 15nC @ 10V 280pF @ 25V 10V ±30V
STQ2HNK60ZR-AP
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757
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STMicroelectronics MOSFET N-CH 600V 0.5A TO-92 SuperMESH™ Active Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 3W (Tc) N-Channel - 600V 500mA (Tc) 4.8 Ohm @ 1A, 10V 4.5V @ 50µA 15nC @ 10V 280pF @ 25V 10V ±30V
SI3457CDV-T1-E3
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683
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Vishay Siliconix MOSFET P-CH 30V 5.1A 6-TSOP TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 3W (Tc) P-Channel - 30V 5.1A (Tc) 74 mOhm @ 4.1A, 10V 3V @ 250µA 15nC @ 10V 450pF @ 15V 4.5V, 10V ±20V
SI3457CDV-T1-E3
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RFQ
3,450
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Vishay Siliconix MOSFET P-CH 30V 5.1A 6-TSOP TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 3W (Tc) P-Channel - 30V 5.1A (Tc) 74 mOhm @ 4.1A, 10V 3V @ 250µA 15nC @ 10V 450pF @ 15V 4.5V, 10V ±20V