Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFI9620GPBF
RFQ
VIEW
RFQ
965
In-stock
Vishay Siliconix MOSFET P-CH 200V 3A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) P-Channel - 200V 3A (Tc) 1.5 Ohm @ 1.8A, 10V 4V @ 250µA 15nC @ 10V 340pF @ 15V 10V ±20V
FQP2N90
RFQ
VIEW
RFQ
1,720
In-stock
ON Semiconductor MOSFET N-CH 900V 2.2A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 85W (Tc) N-Channel - 900V 2.2A (Tc) 7.2 Ohm @ 1.1A, 10V 5V @ 250µA 15nC @ 10V 500pF @ 25V 10V ±30V
FQP2N80
RFQ
VIEW
RFQ
3,429
In-stock
ON Semiconductor MOSFET N-CH 800V 2.4A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 85W (Tc) N-Channel - 800V 2.4A (Tc) 6.3 Ohm @ 1.2A, 10V 5V @ 250µA 15nC @ 10V 550pF @ 25V 10V ±30V
FQP8P10
RFQ
VIEW
RFQ
3,526
In-stock
ON Semiconductor MOSFET P-CH 100V 8A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 65W (Tc) P-Channel - 100V 8A (Tc) 530 mOhm @ 4A, 10V 4V @ 250µA 15nC @ 10V 470pF @ 25V 10V ±30V