Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB120P04P4L03ATMA1
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2,883
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Infineon Technologies MOSFET P-CH 40V 120A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 136W (Tc) P-Channel - 40V 120A (Tc) 3.1 mOhm @ 100A, 10V 2.2V @ 340µA 234nC @ 10V 15000pF @ 25V 4.5V, 10V ±16V
IPD031N06L3GATMA1
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656
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Infineon Technologies MOSFET N-CH 60V 100A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 167W (Tc) N-Channel - 60V 100A (Tc) 3.1 mOhm @ 100A, 10V 2.2V @ 93µA 79nC @ 4.5V 13000pF @ 30V 4.5V, 10V ±20V
CSD19505KTT
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2,553
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Texas Instruments MOSFET N-CH 80V 200A DDPAK-3 NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA DDPAK/TO-263-3 300W (Tc) N-Channel - 80V 200A (Ta) 3.1 mOhm @ 100A, 10V 3.2V @ 250µA 76nC @ 10V 7920pF @ 40V 6V, 10V ±20V
IPB031N08N5ATMA1
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3,437
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Infineon Technologies MOSFET N-CH 80V TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 167W (Tc) N-Channel - 80V 120A (Tc) 3.1 mOhm @ 100A, 10V 3.8V @ 108µA 87nC @ 10V 6240pF @ 40V 6V, 10V ±20V