Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRL530NPBF
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Infineon Technologies MOSFET N-CH 100V 17A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 79W (Tc) N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V
IRLI530NPBF
RFQ
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RFQ
1,457
In-stock
Infineon Technologies MOSFET N-CH 100V 12A TO220FP HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 41W (Tc) N-Channel - 100V 12A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V