Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RJK5012DPP-E0#T2
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2,734
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Renesas Electronics America MOSFET N-CH 500V 12A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel 500V 12A (Ta) 620 mOhm @ 6A, 10V - 29nC @ 10V 1100pF @ 25V 10V ±30V
RJK5012DPE-00#J3
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3,594
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Renesas Electronics America MOSFET N-CH 500V 12A LDPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-83 4-LDPAK 100W (Tc) N-Channel 500V 12A (Ta) 620 mOhm @ 6A, 10V - 29nC @ 10V 1100pF @ 25V 10V ±30V
RQ3E120BNTB
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3,543
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Rohm Semiconductor MOSFET N-CH 30V 12A HSMT8 - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-HSMT (3.2x3) 2W (Ta) N-Channel 30V 12A (Ta) 9.3 mOhm @ 12A, 10V 2.5V @ 1mA 29nC @ 10V 1500pF @ 15V 4.5V, 10V ±20V
RQ3E120BNTB
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1,963
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Rohm Semiconductor MOSFET N-CH 30V 12A HSMT8 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-HSMT (3.2x3) 2W (Ta) N-Channel 30V 12A (Ta) 9.3 mOhm @ 12A, 10V 2.5V @ 1mA 29nC @ 10V 1500pF @ 15V 4.5V, 10V ±20V
RQ3E120BNTB
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1,440
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Rohm Semiconductor MOSFET N-CH 30V 12A HSMT8 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-HSMT (3.2x3) 2W (Ta) N-Channel 30V 12A (Ta) 9.3 mOhm @ 12A, 10V 2.5V @ 1mA 29nC @ 10V 1500pF @ 15V 4.5V, 10V ±20V