- Manufacture :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,921
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 12A | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 800mW (Ta) | N-Channel | - | 30V | 12A (Ta) | 10 mOhm @ 9A, 10V | 3V @ 250µA | 14nC @ 10V | 886pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
927
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | |||
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|
VIEW |
2,750
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 12A | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 800mW (Ta) | N-Channel | - | 30V | 12A (Ta) | 10 mOhm @ 9A, 10V | 3V @ 250µA | 14nC @ 10V | 886pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,695
In-stock
|
Diodes Incorporated | MOSFET N-CH 30V 12A | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 800mW (Ta) | N-Channel | - | 30V | 12A (Ta) | 10 mOhm @ 9A, 10V | 3V @ 250µA | 14nC @ 10V | 886pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,692
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO-3PN | DTMOSII | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 144W (Tc) | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | |||
