- Series :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,442
In-stock
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ON Semiconductor | MOSFET P-CH 12V 12A 6QFN | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-MicroFET (2x2) | 2.4W (Ta) | P-Channel | - | 12V | 12A (Ta) | 12.5 mOhm @ 12A, 4.5V | 1V @ 250µA | 34nC @ 4.5V | 3957pF @ 6V | 1.8V, 4.5V | ±8V | |||
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VIEW |
3,572
In-stock
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ON Semiconductor | MOSFET P-CH 12V 12A 6QFN | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-MicroFET (2x2) | 2.4W (Ta) | P-Channel | - | 12V | 12A (Ta) | 12.5 mOhm @ 12A, 4.5V | 1V @ 250µA | 34nC @ 4.5V | 3957pF @ 6V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,451
In-stock
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ON Semiconductor | MOSFET P-CH 12V 12A 6QFN | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-MicroFET (2x2) | 2.4W (Ta) | P-Channel | - | 12V | 12A (Ta) | 12.5 mOhm @ 12A, 4.5V | 1V @ 250µA | 34nC @ 4.5V | 3957pF @ 6V | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,029
In-stock
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Micro Commercial Co | MOSFET N-CH 20V 12A DFN202 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | DFN2020-6J | - | N-Channel | - | 20V | 12A (Ta) | 11 mOhm @ 9.7A, 4.5V | 1V @ 250µA | 32nC @ 5V | 1800pF @ 4V | 1.2V, 4.5V | ±10V | |||
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VIEW |
667
In-stock
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Micro Commercial Co | MOSFET N-CH 20V 12A DFN202 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | DFN2020-6J | - | N-Channel | - | 20V | 12A (Ta) | 11 mOhm @ 9.7A, 4.5V | 1V @ 250µA | 32nC @ 5V | 1800pF @ 4V | 1.2V, 4.5V | ±10V | |||
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VIEW |
3,261
In-stock
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Micro Commercial Co | MOSFET N-CH 20V 12A DFN202 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | DFN2020-6J | - | N-Channel | - | 20V | 12A (Ta) | 11 mOhm @ 9.7A, 4.5V | 1V @ 250µA | 32nC @ 5V | 1800pF @ 4V | 1.2V, 4.5V | ±10V | |||
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VIEW |
3,285
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 12A 6-UDFNB | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 40V | 12A (Ta) | 11.6 mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5nC @ 4.5V | 1110pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
2,394
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 12A 6-UDFNB | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 40V | 12A (Ta) | 11.6 mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5nC @ 4.5V | 1110pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
2,956
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 12A 6-UDFNB | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 40V | 12A (Ta) | 11.6 mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5nC @ 4.5V | 1110pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
754
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 12V 12A UDFN6B | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | - | 12V | 12A (Ta) | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | |||
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VIEW |
1,824
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 12V 12A UDFN6B | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | - | 12V | 12A (Ta) | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | |||
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VIEW |
618
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 12V 12A UDFN6B | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | - | 12V | 12A (Ta) | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | |||
