Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFHM8337TRPBF
RFQ
VIEW
RFQ
2,848
In-stock
Infineon Technologies MOSFET N-CH 30V 12A 8PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (3.3x3.3), Power33 2.8W (Ta), 25W (Tc) N-Channel 30V 12A (Ta) 12.4 mOhm @ 12A, 10V 2.35V @ 25µA 8.1nC @ 4.5V 755pF @ 15V 4.5V, 10V ±20V
RS1G120MNTB
RFQ
VIEW
RFQ
3,614
In-stock
Rohm Semiconductor MOSFET N-CH 40V 12A 8HSOP - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-HSOP 3W (Ta), 25W (Tc) N-Channel 40V 12A (Ta) 16.2 mOhm @ 12A, 10V 2.5V @ 1mA 9.4nC @ 10V 570pF @ 20V 4.5V, 10V ±20V