- Series :
- Operating Temperature :
- Supplier Device Package :
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11 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,840
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 450V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 450V | 12A (Ta) | 520 mOhm @ 6A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||||
VIEW |
927
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | ||||
VIEW |
1,657
In-stock
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Renesas Electronics America | MOSFET N-CH 500V 12A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FL | 30W (Tc) | N-Channel | 500V | 12A (Ta) | 700 mOhm @ 6A, 10V | - | 27.8nC @ 10V | 1050pF @ 25V | 10V | ±30V | ||||
VIEW |
2,734
In-stock
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Renesas Electronics America | MOSFET N-CH 500V 12A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | 500V | 12A (Ta) | 620 mOhm @ 6A, 10V | - | 29nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||||
VIEW |
2,036
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 550V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 550V | 12A (Ta) | 570 mOhm @ 6A, 10V | 4V @ 1mA | 28nC @ 10V | 1550pF @ 25V | 10V | ±30V | ||||
VIEW |
1,985
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 525V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 525V | 12A (Ta) | 580 mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | ||||
VIEW |
2,648
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 500V | 12A (Ta) | 520 mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | ||||
VIEW |
2,606
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V TO220SIS | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 500V | 12A (Ta) | 520 mOhm @ 6A, 10V | 4V @ 1.2mA | 40nC @ 10V | 1300pF @ 25V | 10V | ±30V | ||||
VIEW |
1,080
In-stock
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Rohm Semiconductor | MOSFET N-CH 250V 12A TO-220FM | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 2.23W (Ta), 40W (Tc) | N-Channel | 250V | 12A (Ta) | - | - | - | - | 10V | ±30V | ||||
VIEW |
2,396
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 12A (Ta) | 550 mOhm @ 6A, 10V | 4V @ 1mA | 38nC @ 10V | 1800pF @ 25V | 10V | ±30V | ||||
VIEW |
2,682
In-stock
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Central Semiconductor Corp | MOSFET N-CH 800V 12A | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | 800V | 12A (Ta) | 450 mOhm @ 6A, 10V | 4V @ 250µA | 52.4nC @ 10V | 1090pF @ 100V | 10V | 30V |