- Series :
- Mounting Type :
- FET Type :
- Rds On (Max) @ Id, Vgs :
-
- 11.1 mOhm @ 6A, 10V (2)
- 12 mOhm @ 4A, 4.5V (3)
- 16.2 mOhm @ 12A, 10V (3)
- 17 mOhm @ 10A, 10V (3)
- 400 mOhm @ 6A, 10V (2)
- 520 mOhm @ 6A, 10V (3)
- 550 mOhm @ 6A, 10V (1)
- 570 mOhm @ 6A, 10V (1)
- 580 mOhm @ 6A, 10V (1)
- 62 mOhm @ 6A, 10V (4)
- 620 mOhm @ 6A, 10V (2)
- 7 mOhm @ 6A, 10V (1)
- 700 mOhm @ 6A, 10V (2)
- 8 mOhm @ 12A, 10V (3)
- 8.2 mOhm @ 25A, 10V (1)
- 8.8 mOhm @ 12A, 10V (3)
- 9.3 mOhm @ 12A, 10V (3)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 1030pF @ 15V (1)
- 1050pF @ 25V (2)
- 1100pF @ 10V (1)
- 1100pF @ 25V (2)
- 1150pF @ 20V (4)
- 1200pF @ 25V (1)
- 1300pF @ 25V (1)
- 1350pF @ 25V (2)
- 1500pF @ 15V (3)
- 1550pF @ 25V (1)
- 1800pF @ 25V (1)
- 2700pF @ 10V (3)
- 2900pF @ 15V (3)
- 3200pF @ 15V (3)
- 570pF @ 20V (3)
- 590pF @ 15V (3)
- 720pF @ 10V (2)
- 860pF @ 10V (2)
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
39 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
3,840
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 450V | 12A (Ta) | 520 mOhm @ 6A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | ||||
VIEW |
988
In-stock
|
Renesas Electronics America | MOSFET N-CH 30V 12A 8-SOP | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1.8W (Ta) | N-Channel | 30V | 12A (Ta) | 11.1 mOhm @ 6A, 10V | - | 6nC @ 4.5V | 860pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
938
In-stock
|
Panasonic Electronic Components | MOSFET N CH 33V 12A WMINI8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | WMini8-F1 | 1W (Ta) | N-Channel | 33V | 12A (Ta) | 7 mOhm @ 6A, 10V | 2.5V @ 1.73mA | 10.2nC @ 4.5V | 1100pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
1,210
In-stock
|
Renesas Electronics America | MOSFET N-CH 30V 12A 8-SOP | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1.8W (Ta) | N-Channel | 30V | 12A (Ta) | 11.1 mOhm @ 6A, 10V | - | 6nC @ 4.5V | 860pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
927
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | ||||
VIEW |
1,657
In-stock
|
Renesas Electronics America | MOSFET N-CH 500V 12A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FL | 30W (Tc) | N-Channel | 500V | 12A (Ta) | 700 mOhm @ 6A, 10V | - | 27.8nC @ 10V | 1050pF @ 25V | 10V | ±30V | ||||
VIEW |
2,170
In-stock
|
Renesas Electronics America | MOSFET N-CH 500V 12A LDPAK | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-83 | 4-LDPAK | 100W (Tc) | N-Channel | 500V | 12A (Ta) | 700 mOhm @ 6A, 10V | - | 27.8nC @ 10V | 1050pF @ 25V | 10V | ±30V | ||||
VIEW |
2,734
In-stock
|
Renesas Electronics America | MOSFET N-CH 500V 12A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | 500V | 12A (Ta) | 620 mOhm @ 6A, 10V | - | 29nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||||
VIEW |
3,594
In-stock
|
Renesas Electronics America | MOSFET N-CH 500V 12A LDPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-83 | 4-LDPAK | 100W (Tc) | N-Channel | 500V | 12A (Ta) | 620 mOhm @ 6A, 10V | - | 29nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||||
VIEW |
2,036
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 550V | 12A (Ta) | 570 mOhm @ 6A, 10V | 4V @ 1mA | 28nC @ 10V | 1550pF @ 25V | 10V | ±30V | ||||
VIEW |
1,985
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 525V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 525V | 12A (Ta) | 580 mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | ||||
VIEW |
2,648
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 500V | 12A (Ta) | 520 mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | ||||
VIEW |
1,390
In-stock
|
Sanken | MOSFET N-CH 30V 26A 8DFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) | 3.1W (Ta), 40W (Tc) | N-Channel | 30V | 12A (Ta) | 8.2 mOhm @ 25A, 10V | 2.5V @ 250µA | 16.3nC @ 10V | 1030pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
2,606
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V TO220SIS | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 500V | 12A (Ta) | 520 mOhm @ 6A, 10V | 4V @ 1.2mA | 40nC @ 10V | 1300pF @ 25V | 10V | ±30V | ||||
VIEW |
1,080
In-stock
|
Rohm Semiconductor | MOSFET N-CH 250V 12A TO-220FM | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 2.23W (Ta), 40W (Tc) | N-Channel | 250V | 12A (Ta) | - | - | - | - | 10V | ±30V | ||||
VIEW |
2,396
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 12A (Ta) | 550 mOhm @ 6A, 10V | 4V @ 1mA | 38nC @ 10V | 1800pF @ 25V | 10V | ±30V | ||||
VIEW |
2,692
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO-3PN | DTMOSII | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 144W (Tc) | N-Channel | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | ||||
VIEW |
2,233
In-stock
|
Micro Commercial Co | P-CHANNEL MOSFET, SOP-8 PACKAGE | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1.4W (Ta) | P-Channel | 30V | 12A (Ta) | 17 mOhm @ 10A, 10V | 2.2V @ 250µA | 48nC @ 10V | 2900pF @ 15V | 10V | ±20V | ||||
VIEW |
2,083
In-stock
|
Micro Commercial Co | P-CHANNEL MOSFET, SOP-8 PACKAGE | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1.4W (Ta) | P-Channel | 30V | 12A (Ta) | 17 mOhm @ 10A, 10V | 2.2V @ 250µA | 48nC @ 10V | 2900pF @ 15V | 10V | ±20V | ||||
VIEW |
1,395
In-stock
|
Micro Commercial Co | P-CHANNEL MOSFET, SOP-8 PACKAGE | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1.4W (Ta) | P-Channel | 30V | 12A (Ta) | 17 mOhm @ 10A, 10V | 2.2V @ 250µA | 48nC @ 10V | 2900pF @ 15V | 10V | ±20V | ||||
VIEW |
3,216
In-stock
|
ON Semiconductor | MOSFET P-CH 60V 12A TP | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP | 1W (Ta), 15W (Tc) | P-Channel | 60V | 12A (Ta) | 62 mOhm @ 6A, 10V | - | 26nC @ 10V | 1150pF @ 20V | 4V, 10V | ±20V | ||||
VIEW |
2,496
In-stock
|
Rohm Semiconductor | MOSFET N-CH 30V 12A 8-HSMT | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 2W (Ta), 16W (Tc) | N-Channel | 30V | 12A (Ta) | 8.8 mOhm @ 12A, 10V | 2.5V @ 1mA | 10nC @ 10V | 590pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
2,179
In-stock
|
Rohm Semiconductor | MOSFET N-CH 30V 12A 8-HSMT | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 2W (Ta), 16W (Tc) | N-Channel | 30V | 12A (Ta) | 8.8 mOhm @ 12A, 10V | 2.5V @ 1mA | 10nC @ 10V | 590pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
2,188
In-stock
|
Rohm Semiconductor | MOSFET N-CH 30V 12A 8-HSMT | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 2W (Ta), 16W (Tc) | N-Channel | 30V | 12A (Ta) | 8.8 mOhm @ 12A, 10V | 2.5V @ 1mA | 10nC @ 10V | 590pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
3,259
In-stock
|
Rohm Semiconductor | MOSFET P-CH 30V 12A HSMT8 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 2W (Ta) | P-Channel | 30V | 12A (Ta) | 8 mOhm @ 12A, 10V | 2.5V @ 1mA | 62nC @ 10V | 3200pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
3,926
In-stock
|
Rohm Semiconductor | MOSFET P-CH 30V 12A HSMT8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 2W (Ta) | P-Channel | 30V | 12A (Ta) | 8 mOhm @ 12A, 10V | 2.5V @ 1mA | 62nC @ 10V | 3200pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
2,416
In-stock
|
Rohm Semiconductor | MOSFET P-CH 30V 12A HSMT8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 2W (Ta) | P-Channel | 30V | 12A (Ta) | 8 mOhm @ 12A, 10V | 2.5V @ 1mA | 62nC @ 10V | 3200pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
754
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 12V 12A UDFN6B | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | 12V | 12A (Ta) | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | ||||
VIEW |
1,824
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 12V 12A UDFN6B | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | 12V | 12A (Ta) | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | ||||
VIEW |
618
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 12V 12A UDFN6B | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | 12V | 12A (Ta) | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V |