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- Rds On (Max) @ Id, Vgs :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,170
In-stock
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Infineon Technologies | MOSFET N-CH 650V 17A HSOF-8 | CoolMOS™ G7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8 | 106W (Tc) | N-Channel | - | 650V | 17A (Tc) | 150 mOhm @ 5.3A, 10V | 4V @ 260µA | 23nC @ 10V | 902pF @ 400V | 10V | ±20V | |||
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VIEW |
790
In-stock
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Infineon Technologies | MOSFET N-CH 650V 17A HSOF-8 | CoolMOS™ G7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8 | 106W (Tc) | N-Channel | - | 650V | 17A (Tc) | 150 mOhm @ 5.3A, 10V | 4V @ 260µA | 23nC @ 10V | 902pF @ 400V | 10V | ±20V | |||
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VIEW |
3,666
In-stock
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Infineon Technologies | MOSFET N-CH 650V 17A HSOF-8 | CoolMOS™ G7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8 | 106W (Tc) | N-Channel | - | 650V | 17A (Tc) | 150 mOhm @ 5.3A, 10V | 4V @ 260µA | 23nC @ 10V | 902pF @ 400V | 10V | ±20V | |||
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VIEW |
2,196
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 17A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 60V | 17A (Tc) | 11.4 mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23nC @ 10V | 2000pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
3,535
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 17A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 60V | 17A (Tc) | 11.4 mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23nC @ 10V | 2000pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
2,087
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 17A 8TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 60V | 17A (Tc) | 11.4 mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23nC @ 10V | 2000pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
2,440
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 17A 8SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 34W (Tc) | N-Channel | - | 60V | 17A (Tc) | 11.4 mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23nC @ 10V | 2000pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
730
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 17A 8SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 34W (Tc) | N-Channel | - | 60V | 17A (Tc) | 11.4 mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23nC @ 10V | 2000pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
671
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 17A 8SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 34W (Tc) | N-Channel | - | 60V | 17A (Tc) | 11.4 mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23nC @ 10V | 2000pF @ 30V | 4.5V, 10V | ±20V | |||
