Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTX17N120L
RFQ
VIEW
RFQ
3,193
In-stock
IXYS MOSFET N-CH 1200V 17A PLUS247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 700W (Tc) N-Channel 1200V 17A (Tc) 900 mOhm @ 8.5A, 20V 5V @ 250µA 155nC @ 15V 8300pF @ 25V 20V ±30V
IXTK17N120L
RFQ
VIEW
RFQ
1,196
In-stock
IXYS MOSFET N-CH 1200V 17A TO-264 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 700W (Tc) N-Channel 1200V 17A (Tc) 900 mOhm @ 8.5A, 20V 5V @ 250µA 155nC @ 15V 8300pF @ 25V 20V ±30V
APT12067JLL
RFQ
VIEW
RFQ
3,062
In-stock
Microsemi Corporation MOSFET N-CH 1200V 17A SOT227 POWER MOS 7® Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 460W (Tc) N-Channel 1200V 17A (Tc) 570 mOhm @ 10A, 10V 5V @ 2.5mA 290nC @ 10V 6200pF @ 25V 10V ±30V
SCT3160KLGC11
RFQ
VIEW
RFQ
1,359
In-stock
Rohm Semiconductor MOSFET NCH 1.2KV 17A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 103W (Tc) N-Channel 1200V 17A (Tc) 208 mOhm @ 5A, 18V 5.6V @ 2.5mA 42nC @ 18V 398pF @ 800V 18V +22V, -4V