Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK4A53D(STA4,Q,M)
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2,894
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Toshiba Semiconductor and Storage MOSFET N-CH 525V 4A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 525V 4A (Ta) 1.7 Ohm @ 2A, 10V 4.4V @ 1mA 11nC @ 10V 490pF @ 25V 10V ±30V
TK5P53D(T6RSS-Q)
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3,321
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Toshiba Semiconductor and Storage MOSFET N-CH 525V 5A DPAK-3 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 80W (Tc) N-Channel - 525V 5A (Ta) 1.5 Ohm @ 2.5A, 10V 4.4V @ 1mA 11nC @ 10V 540pF @ 25V 10V ±30V
TK5A53D(STA4,Q,M)
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2,952
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Toshiba Semiconductor and Storage MOSFET N-CH 525V 5A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 525V 5A (Ta) 1.5 Ohm @ 2.5A, 10V 4.4V @ 1mA 11nC @ 10V 540pF @ 25V 10V ±30V
STP4N52K3
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1,285
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STMicroelectronics MOSFET N-CH 525V 2.5A TO220 SuperMESH3™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 45W (Tc) N-Channel - 525V 2.5A (Tc) 2.6 Ohm @ 1.25A, 10V 4.5V @ 50µA 11nC @ 10V 334pF @ 100V 10V ±30V
STU4N52K3
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1,096
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STMicroelectronics MOSFET N-CH 525V 2.5A IPAK SuperMESH3™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 45W (Tc) N-Channel - 525V 2.5A (Tc) 2.6 Ohm @ 1.25A, 10V 4.5V @ 50µA 11nC @ 10V 334pF @ 100V 10V ±30V