- Manufacture :
- Series :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,160
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 525V 6A DPAK-3 | π-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 100W (Tc) | N-Channel | 525V | 6A (Ta) | 1.3 Ohm @ 3A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,358
In-stock
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STMicroelectronics | MOSFET N-CH 525V 4A I2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 20W (Tc) | N-Channel | 525V | 4A (Tc) | 2.6 Ohm @ 2.2A, 10V | 4.5V @ 50µA | 12nC @ 10V | 340pF @ 100V | 10V | ±30V | |||
|
VIEW |
1,447
In-stock
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STMicroelectronics | MOSFET N-CH 525V 4A IPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 45W (Tc) | N-Channel | 525V | 4A (Tc) | 2.6 Ohm @ 2.2A, 10V | 4.5V @ 50µA | 12nC @ 10V | 340pF @ 100V | 10V | ±30V | |||
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|
VIEW |
2,797
In-stock
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STMicroelectronics | MOSFET N-CH 525V 4A DPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 45W (Tc) | N-Channel | 525V | 4A (Tc) | 2.6 Ohm @ 2.2A, 10V | 4.5V @ 50µA | 12nC @ 10V | 340pF @ 100V | 10V | ±30V | |||
|
VIEW |
1,864
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 525V 6A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 525V | 6A (Ta) | 1.3 Ohm @ 3A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,919
In-stock
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STMicroelectronics | MOSFET N-CH 525V 4A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 45W (Tc) | N-Channel | 525V | 4A (Tc) | 2.6 Ohm @ 2.2A, 10V | 4.5V @ 50µA | 12nC @ 10V | 340pF @ 100V | 10V | ±30V | |||
