- Series :
- Packaging :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,360
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 6A VS6 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 20V | 6A (Ta) | 20 mOhm @ 3A, 4.5V | 1.2V @ 200µA | 9nC @ 5V | 630pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
|
VIEW |
1,121
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 6A VS6 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 30V | 6A (Ta) | 20 mOhm @ 3A, 10V | 2.5V @ 1mA | 14nC @ 10V | 640pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,250
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 6.1A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 60V | 6.1A (Ta) | 59 mOhm @ 3.1A, 10V | 2.3V @ 100µA | 12nC @ 10V | 830pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,381
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 5.3A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 40V | 5.3A (Ta) | 81 mOhm @ 2.7A, 10V | 2.3V @ 100µA | 4.7nC @ 10V | 290pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,684
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 5.9A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 30V | 5.9A (Ta) | 60 mOhm @ 3A, 10V | 2.3V @ 100µA | 4.8nC @ 10V | 300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
780
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 4.5A VS6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 30V | 4.5A (Ta) | 56 mOhm @ 2.2A, 10V | 2V @ 100µA | 14nC @ 10V | 510pF @ 10V | - | - | |||
|
|
VIEW |
2,409
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5A VS6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 20V | 5A (Ta) | 55 mOhm @ 2.5A, 4.5V | 1.2V @ 200µA | 10nC @ 5V | 690pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
|
VIEW |
1,762
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.5A VS-6 | U-MOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 20V | 5.5A (Ta) | 40 mOhm @ 2.8A, 4.5V | 1V @ 1mA | 10nC @ 5V | 700pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
3,393
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.5A VS-6 | U-MOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 20V | 5.5A (Ta) | 40 mOhm @ 2.8A, 4.5V | 1V @ 1mA | 10nC @ 5V | 700pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
1,280
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.5A VS-6 | U-MOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 20V | 5.5A (Ta) | 40 mOhm @ 2.8A, 4.5V | 1V @ 1mA | 10nC @ 5V | 700pF @ 10V | 1.5V, 4.5V | ±8V | |||
