Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQP16N25
RFQ
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RFQ
1,818
In-stock
ON Semiconductor MOSFET N-CH 250V 16A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 142W (Tc) N-Channel 250V 16A (Tc) 230 mOhm @ 8A, 10V 5V @ 250µA 35nC @ 10V 1200pF @ 25V 10V ±30V
IRFIZ34GPBF
RFQ
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RFQ
2,016
In-stock
Vishay Siliconix MOSFET N-CH 60V 20A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 42W (Tc) N-Channel 60V 20A (Tc) 50 mOhm @ 12A, 10V 4V @ 250µA 46nC @ 10V 1200pF @ 25V 10V ±20V
FQP12P20
RFQ
VIEW
RFQ
772
In-stock
ON Semiconductor MOSFET P-CH 200V 11.5A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 120W (Tc) P-Channel 200V 11.5A (Tc) 470 mOhm @ 5.75A, 10V 5V @ 250µA 40nC @ 10V 1200pF @ 25V 10V ±30V
IRFIBF30GPBF
RFQ
VIEW
RFQ
1,948
In-stock
Vishay Siliconix MOSFET N-CH 900V 1.9A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 35W (Tc) N-Channel 900V 1.9A (Tc) 3.7 Ohm @ 1.1A, 10V 4V @ 250µA 78nC @ 10V 1200pF @ 25V 10V ±20V
IRFI9640GPBF
RFQ
VIEW
RFQ
2,368
In-stock
Vishay Siliconix MOSFET P-CH 200V 6.1A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 40W (Tc) P-Channel 200V 6.1A (Tc) 500 mOhm @ 3.7A, 10V 4V @ 250µA 44nC @ 10V 1200pF @ 25V 10V ±20V