Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQP27P06
RFQ
VIEW
RFQ
1,043
In-stock
ON Semiconductor MOSFET P-CH 60V 27A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 120W (Tc) P-Channel - 60V 27A (Tc) 70 mOhm @ 13.5A, 10V 4V @ 250µA 43nC @ 10V 1400pF @ 25V 10V ±25V
STP21N90K5
RFQ
VIEW
RFQ
1,739
In-stock
STMicroelectronics MOSFET N-CH 900V 18.5A TO-220 SuperMESH5™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 250W (Tc) N-Channel - 900V 18.5A (Tc) 299 mOhm @ 9A, 10V 5V @ 100µA 43nC @ 10V 1645pF @ 100V 10V ±30V
IRFI630GPBF
RFQ
VIEW
RFQ
3,756
In-stock
Vishay Siliconix MOSFET N-CH 200V 5.9A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 35W (Tc) N-Channel - 200V 5.9A (Tc) 400 mOhm @ 3.5A, 10V 4V @ 250µA 43nC @ 10V 800pF @ 25V 10V ±20V
FDP65N06
RFQ
VIEW
RFQ
785
In-stock
ON Semiconductor MOSFET N-CH 60V 65A TO-220 UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 135W (Tc) N-Channel - 60V 65A (Tc) 16 mOhm @ 32.5A, 10V 4V @ 250µA 43nC @ 10V 2170pF @ 25V 10V ±20V