- Manufacture :
- Series :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,611
In-stock
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ON Semiconductor | MOSFET N-CH 100V 61A TO-220AB | PowerTrench® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | 150W (Tc) | N-Channel | - | 100V | 9A (Ta), 61A (Tc) | 16 mOhm @ 61A, 10V | 4V @ 250µA | 53nC @ 10V | 2880pF @ 25V | 6V, 10V | ±20V | |||
|
VIEW |
2,532
In-stock
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Texas Instruments | MOSFET N-CH 60V 100A TO220-3 | NexFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | 250W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.2 mOhm @ 100A, 10V | 2.2V @ 250µA | 53nC @ 10V | 4680pF @ 30V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,977
In-stock
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ON Semiconductor | MOSFET N-CH 200V 19A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 139W (Tc) | N-Channel | - | 200V | 19A (Tc) | 170 mOhm @ 9.5A, 10V | 4V @ 250µA | 53nC @ 10V | 1080pF @ 25V | 10V | ±30V | |||
