Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQP11N40C
RFQ
VIEW
RFQ
3,763
In-stock
ON Semiconductor MOSFET N-CH 400V 10.5A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 135W (Tc) N-Channel - 400V 10.5A (Tc) 530 mOhm @ 5.25A, 10V 4V @ 250µA 35nC @ 10V 1090pF @ 25V 10V ±30V
FQP16N25
RFQ
VIEW
RFQ
1,818
In-stock
ON Semiconductor MOSFET N-CH 250V 16A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 142W (Tc) N-Channel - 250V 16A (Tc) 230 mOhm @ 8A, 10V 5V @ 250µA 35nC @ 10V 1200pF @ 25V 10V ±30V
CSD19533KCS
RFQ
VIEW
RFQ
3,715
In-stock
Texas Instruments MOSFET N-CH 100V 86A TO220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 188W (Tc) N-Channel - 100V 100A (Ta) 10.5 mOhm @ 55A, 10V 3.4V @ 250µA 35nC @ 10V 2670pF @ 50V 6V, 10V ±20V
FQP7N80C
RFQ
VIEW
RFQ
1,413
In-stock
ON Semiconductor MOSFET N-CH 800V 6.6A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 167W (Tc) N-Channel - 800V 6.6A (Tc) 1.9 Ohm @ 3.3A, 10V 5V @ 250µA 35nC @ 10V 1680pF @ 25V 10V ±30V