- Series :
- Operating Temperature :
- Power Dissipation (Max) :
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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,908
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 25A TO-220AB | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 60W (Tc) | N-Channel | - | 60V | 25A (Ta) | 18 mOhm @ 12.5A, 10V | - | 29nC @ 10V | - | - | - | |||
|
VIEW |
2,971
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 4.3A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 35W (Tc) | P-Channel | - | 200V | 4.3A (Tc) | 800 mOhm @ 2.6A, 10V | 4V @ 250µA | 29nC @ 10V | 700pF @ 25V | 10V | ±20V | |||
|
VIEW |
846
In-stock
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ON Semiconductor | MOSFET N-CH 600V 9A TO220 | SuperMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 83.3W (Tc) | N-Channel | - | 600V | 9A (Tc) | 385 mOhm @ 4.5A, 10V | 4V @ 250µA | 29nC @ 10V | 1240pF @ 100V | 10V | ±30V | |||
