Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQP2N60C
RFQ
VIEW
RFQ
1,872
In-stock
ON Semiconductor MOSFET N-CH 600V 2A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 54W (Tc) N-Channel - 600V 2A (Tc) 4.7 Ohm @ 1A, 10V 4V @ 250µA 12nC @ 10V 235pF @ 25V 10V ±30V
IXTP8N70X2
RFQ
VIEW
RFQ
1,594
In-stock
IXYS MOSFET N-CHANNEL 700V 8A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 150W (Tc) N-Channel - 700V 8A (Tc) 500 mOhm @ 500mA, 10V 5V @ 250µA 12nC @ 10V 800pF @ 10V 10V ±30V
IRFI9Z14GPBF
RFQ
VIEW
RFQ
614
In-stock
Vishay Siliconix MOSFET P-CH 60V 5.3A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 27W (Tc) P-Channel - 60V 5.3A (Tc) 500 mOhm @ 3.2A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 10V ±20V
FDP5N50NZ
RFQ
VIEW
RFQ
3,904
In-stock
ON Semiconductor MOSFET N-CH 500V 4.5A TO220 UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 78W (Tc) N-Channel - 500V 4.5A (Tc) 1.5 Ohm @ 2.25A, 10V 5V @ 250µA 12nC @ 10V 440pF @ 25V 10V ±25V