Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FCP260N65S3
RFQ
VIEW
RFQ
2,860
In-stock
ON Semiconductor MOSFET N-CH 650V 260MOHM TO220 SuperFET® III Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 90W (Tc) N-Channel 650V 12A (Tc) 260 mOhm @ 6A, 10V 4.5V @ 1.2mA 24nC @ 10V 1010pF @ 400V 10V ±30V
IRFI820G
RFQ
VIEW
RFQ
699
In-stock
Vishay Siliconix MOSFET N-CH 500V 2.1A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) N-Channel 500V 2.1A (Tc) 3 Ohm @ 1.3A, 10V 4V @ 250µA 24nC @ 10V 360pF @ 25V 10V ±20V
CSD18534KCS
RFQ
VIEW
RFQ
3,693
In-stock
Texas Instruments MOSFET N-CH 60V 100A TO220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 107W (Tc) N-Channel 60V 45A (Ta), 100A (Tc) 9.5 mOhm @ 40A, 10V 2.3V @ 250µA 24nC @ 10V 1880pF @ 30V 4.5V, 10V ±20V
IRFI820GPBF
RFQ
VIEW
RFQ
1,197
In-stock
Vishay Siliconix MOSFET N-CH 500V 2.1A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) N-Channel 500V 2.1A (Tc) 3 Ohm @ 1.3A, 10V 4V @ 250µA 24nC @ 10V 360pF @ 25V 10V ±20V