- Manufacture :
- Series :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,179
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 40A TO-220AB | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 | - | N-Channel | 100V | 40A (Ta) | 15 mOhm @ 20A, 10V | 4V @ 1mA | 84nC @ 10V | 4000pF @ 10V | - | - | |||
|
VIEW |
2,644
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 120V 72A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | 255W (Tc) | N-Channel | 120V | 72A (Ta) | 4.4 mOhm @ 36A, 10V | 4V @ 1mA | 130nC @ 10V | 8100pF @ 60V | 10V | ±20V | |||
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VIEW |
2,149
In-stock
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ON Semiconductor | MOSFET N-CH 50V 30A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 75W (Tc) | N-Channel | 50V | 30A (Tc) | 40 mOhm @ 15A, 10V | 4V @ 1mA | - | 2000pF @ 25V | 10V | ±20V | |||
