Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FCP380N60
RFQ
VIEW
RFQ
3,126
In-stock
ON Semiconductor MOSFET N-CH 600V TO220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 106W (Tc) N-Channel - 600V 10.2A (Tc) 380 mOhm @ 5A, 10V 3.5V @ 250µA 40nC @ 10V 1665pF @ 25V 10V ±20V
FCP380N60E
RFQ
VIEW
RFQ
939
In-stock
ON Semiconductor MOSFET N-CH 600V TO220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 106W (Tc) N-Channel - 600V 10.2A (Tc) 380 mOhm @ 5A, 10V 3.5V @ 250µA 45nC @ 10V 1770pF @ 25V 10V ±20V
FCPF380N60E
RFQ
VIEW
RFQ
1,121
In-stock
ON Semiconductor MOSFET N-CH 600V TO-220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3 31W (Tc) N-Channel - 600V 10.2A (Tc) 380 mOhm @ 5A, 10V 3.5V @ 250µA 45nC @ 10V 1770pF @ 25V 10V ±20V
FCP104N60
RFQ
VIEW
RFQ
3,436
In-stock
ON Semiconductor MOSFET N-CH 600V 37A TO-220 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 357W (Tc) N-Channel - 600V 37A (Tc) 104 mOhm @ 18.5A, 10V 3.5V @ 250µA 82nC @ 10V 4165pF @ 380V 10V ±20V
CSD18537NKCS
RFQ
VIEW
RFQ
1,526
In-stock
Texas Instruments MOSFET N-CH 60V 50A TO220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 94W (Tc) N-Channel - 60V 50A (Tc) 14 mOhm @ 25A, 10V 3.5V @ 250µA 18nC @ 10V 1480pF @ 30V 6V, 10V ±20V