Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
1,379
In-stock
ON Semiconductor FET ENGR DEV-NOT REL PowerTrench® Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 2.4W (Ta), 150W (Tc) N-Channel - 100V 128A (Tc) 4.5 mOhm @ 100A, 10V 4V @ 310µA 68nC @ 10V 5065pF @ 50V 10V ±20V
FDP045N10A-F102
RFQ
VIEW
RFQ
2,581
In-stock
ON Semiconductor MOSFET N-CH 100V 120A TO-220-3 PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 263W (Tc) N-Channel - 100V 120A (Tc) 4.5 mOhm @ 100A, 10V 4V @ 250µA 74nC @ 10V 5270pF @ 50V 10V ±20V