- Manufacture :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,624
In-stock
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ON Semiconductor | MOSFET N-CH 200V 6.6A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 63W (Tc) | N-Channel | - | 200V | 6.6A (Tc) | 690 mOhm @ 3.3A, 10V | 5V @ 250µA | 10nC @ 10V | 400pF @ 25V | 10V | ±30V | |||
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VIEW |
2,041
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 6.6A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 60W (Tc) | N-Channel | - | 500V | 6.6A (Tc) | 520 mOhm @ 4A, 10V | 4V @ 250µA | 52nC @ 10V | 1423pF @ 25V | 10V | ±30V | |||
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VIEW |
1,413
In-stock
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ON Semiconductor | MOSFET N-CH 800V 6.6A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 167W (Tc) | N-Channel | - | 800V | 6.6A (Tc) | 1.9 Ohm @ 3.3A, 10V | 5V @ 250µA | 35nC @ 10V | 1680pF @ 25V | 10V | ±30V | |||
