- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
630
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 4.1A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 30W (Tc) | N-Channel | 200V | 4.1A (Tc) | 800 mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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VIEW |
3,173
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 4.1A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 30W (Tc) | N-Channel | 200V | 4.1A (Tc) | 800 mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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VIEW |
880
In-stock
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Vishay Siliconix | MOSFET P-CH 250V 4.1A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 35W (Tc) | P-Channel | 250V | 4.1A (Tc) | 1 Ohm @ 2.5A, 10V | 4V @ 250µA | 38nC @ 10V | 680pF @ 25V | 10V | ±20V | |||
