Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STP6N95K5
RFQ
VIEW
RFQ
1,076
In-stock
STMicroelectronics MOSFET N-CH 950V 9A TO-220 SuperMESH5™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 90W (Tc) N-Channel - 950V 9A (Tc) 1.25 Ohm @ 3A, 10V 5V @ 100µA 13nC @ 10V 450pF @ 100V 10V ±30V
FCP9N60N
RFQ
VIEW
RFQ
846
In-stock
ON Semiconductor MOSFET N-CH 600V 9A TO220 SuperMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 83.3W (Tc) N-Channel - 600V 9A (Tc) 385 mOhm @ 4.5A, 10V 4V @ 250µA 29nC @ 10V 1240pF @ 100V 10V ±30V