Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFI510GPBF
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2,897
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Vishay Siliconix MOSFET N-CH 100V 4.5A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 27W (Tc) N-Channel - 100V 4.5A (Tc) 540 mOhm @ 2.7A, 10V 4V @ 250µA 8.3nC @ 10V 180pF @ 25V 10V ±20V
FQP5N60C
RFQ
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2,286
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ON Semiconductor MOSFET N-CH 600V 4.5A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 100W (Tc) N-Channel - 600V 4.5A (Tc) 2.5 Ohm @ 2.25A, 10V 4V @ 250µA 19nC @ 10V 670pF @ 25V 10V ±30V
IRFI840GLCPBF
RFQ
VIEW
RFQ
642
In-stock
Vishay Siliconix MOSFET N-CH 500V 4.5A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 40W (Tc) N-Channel - 500V 4.5A (Tc) 850 mOhm @ 2.7A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±30V
FDP5N60NZ
RFQ
VIEW
RFQ
3,088
In-stock
ON Semiconductor MOSFET N-CH 600V 4.5A TO-220-3 UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 100W (Tc) N-Channel - 600V 4.5A (Tc) 2 Ohm @ 2.25A, 10V 5V @ 250µA 13nC @ 10V 600pF @ 25V 10V ±25V
FDP5N50NZ
RFQ
VIEW
RFQ
3,904
In-stock
ON Semiconductor MOSFET N-CH 500V 4.5A TO220 UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 78W (Tc) N-Channel - 500V 4.5A (Tc) 1.5 Ohm @ 2.25A, 10V 5V @ 250µA 12nC @ 10V 440pF @ 25V 10V ±25V