Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDP085N10A-F102
RFQ
VIEW
RFQ
1,643
In-stock
ON Semiconductor MOSFET N-CH 100V 96A TO-220-3 PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 188W (Tc) N-Channel - 100V 96A (Tc) 8.5 mOhm @ 96A, 10V 4V @ 250µA 40nC @ 10V 2695pF @ 50V 10V ±20V
CSD18503KCS
RFQ
VIEW
RFQ
1,613
In-stock
Texas Instruments MOSFET N-CH 40V 100A TO220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 188W (Tc) N-Channel - 40V 100A (Tc) 4.5 mOhm @ 75A, 10V 2.3V @ 250µA 36nC @ 10V 3150pF @ 20V 4.5V, 10V ±20V
CSD19533KCS
RFQ
VIEW
RFQ
3,715
In-stock
Texas Instruments MOSFET N-CH 100V 86A TO220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 188W (Tc) N-Channel - 100V 100A (Ta) 10.5 mOhm @ 55A, 10V 3.4V @ 250µA 35nC @ 10V 2670pF @ 50V 6V, 10V ±20V
CSD19503KCS
RFQ
VIEW
RFQ
2,004
In-stock
Texas Instruments MOSFET N-CH 80V 94A TO220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 188W (Tc) N-Channel - 80V 100A (Ta) 9.2 mOhm @ 60A, 10V 3.4V @ 250µA 36nC @ 10V 2730pF @ 40V 6V, 10V ±20V