Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FQP27P06
RFQ
VIEW
RFQ
1,043
In-stock
ON Semiconductor MOSFET P-CH 60V 27A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 120W (Tc) P-Channel - 60V 27A (Tc) 70 mOhm @ 13.5A, 10V 4V @ 250µA 43nC @ 10V 1400pF @ 25V 10V ±25V
FQP9P25
RFQ
VIEW
RFQ
3,177
In-stock
ON Semiconductor MOSFET P-CH 250V 9.4A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 120W (Tc) P-Channel - 250V 9.4A (Tc) 620 mOhm @ 4.7A, 10V 5V @ 250µA 38nC @ 10V 1180pF @ 25V 10V ±30V
FQP12P20
RFQ
VIEW
RFQ
772
In-stock
ON Semiconductor MOSFET P-CH 200V 11.5A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 120W (Tc) P-Channel - 200V 11.5A (Tc) 470 mOhm @ 5.75A, 10V 5V @ 250µA 40nC @ 10V 1200pF @ 25V 10V ±30V