Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FCP11N60F
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1,590
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ON Semiconductor MOSFET N-CH 600V 11A TO-220 SuperFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 125W (Tc) N-Channel - 600V 11A (Tc) 380 mOhm @ 5.5A, 10V 5V @ 250µA 52nC @ 10V 1490pF @ 25V 10V ±30V
STP23NM50N
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RFQ
957
In-stock
STMicroelectronics MOSFET N-CH 500V 17A TO-220 MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 125W (Tc) N-Channel - 500V 17A (Tc) 190 mOhm @ 8.5A, 10V 4V @ 250µA 45nC @ 10V 1330pF @ 50V 10V ±25V
FQP6N60C
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RFQ
2,999
In-stock
ON Semiconductor MOSFET N-CH 600V 5.5A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 125W (Tc) N-Channel - 600V 5.5A (Tc) 2 Ohm @ 2.75A, 10V 4V @ 250µA 20nC @ 10V 810pF @ 25V 10V ±30V
IRLB8314PBF
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RFQ
1,937
In-stock
Infineon Technologies MOSFET N-CH 30V 184A TO220 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 125W (Tc) N-Channel - 30V 130A (Tc) 2.4 mOhm @ 68A, 10V 2.2V @ 100µA 60nC @ 4.5V 5050pF @ 15V 4.5V, 10V ±20V