Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STP20N95K5
RFQ
VIEW
RFQ
3,581
In-stock
STMicroelectronics MOSFET N-CH 950V 17.5A TO-220 SuperMESH5™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 250W (Tc) N-Channel - 950V 17.5A (Tc) 330 mOhm @ 9A, 10V 5V @ 100µA 40nC @ 10V 1500pF @ 100V 10V ±30V
STP21N90K5
RFQ
VIEW
RFQ
1,739
In-stock
STMicroelectronics MOSFET N-CH 900V 18.5A TO-220 SuperMESH5™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 250W (Tc) N-Channel - 900V 18.5A (Tc) 299 mOhm @ 9A, 10V 5V @ 100µA 43nC @ 10V 1645pF @ 100V 10V ±30V
CSD18532KCS
RFQ
VIEW
RFQ
2,532
In-stock
Texas Instruments MOSFET N-CH 60V 100A TO220-3 NexFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 250W (Tc) N-Channel - 60V 100A (Tc) 4.2 mOhm @ 100A, 10V 2.2V @ 250µA 53nC @ 10V 4680pF @ 30V 4.5V, 10V ±20V
STP34NM60N
RFQ
VIEW
RFQ
1,057
In-stock
STMicroelectronics MOSFET N-CH 600V 29A TO-220 MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 250W (Tc) N-Channel - 600V 29A (Tc) 105 mOhm @ 14.5A, 10V 4V @ 250µA 80nC @ 10V 2722pF @ 100V 10V ±25V
FDP20N50F
RFQ
VIEW
RFQ
761
In-stock
ON Semiconductor MOSFET N-CH 500V 20A TO-220 UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 250W (Tc) N-Channel - 500V 20A (Tc) 260 mOhm @ 10A, 10V 5V @ 250µA 65nC @ 10V 3390pF @ 25V 10V ±30V