Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFIB7N50APBF
RFQ
VIEW
RFQ
2,041
In-stock
Vishay Siliconix MOSFET N-CH 500V 6.6A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 60W (Tc) N-Channel 500V 6.6A (Tc) 520 mOhm @ 4A, 10V 4V @ 250µA 52nC @ 10V 1423pF @ 25V 10V ±30V
IRFIB6N60APBF
RFQ
VIEW
RFQ
798
In-stock
Vishay Siliconix MOSFET N-CH 600V 5.5A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 60W (Tc) N-Channel 600V 5.5A (Tc) 750 mOhm @ 3.3A, 10V 4V @ 250µA 49nC @ 10V 1400pF @ 25V 10V ±30V
IRFIB5N65APBF
RFQ
VIEW
RFQ
3,460
In-stock
Vishay Siliconix MOSFET N-CH 650V 5.1A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 60W (Tc) N-Channel 650V 5.1A (Tc) 930 mOhm @ 3.1A, 10V 4V @ 250µA 48nC @ 10V 1417pF @ 25V 10V ±30V