- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | |
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VIEW |
3,453
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 50A TO-220AB | U-MOSIV | Active | Tube | - | - | Through Hole | TO-220-3 | - | - | - | - | - | - | - | - | - | |||
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VIEW |
2,901
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 50A TO-220AB | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 | - | N-Channel | 60V | 50A (Tc) | 8.5 mOhm @ 25A, 10V | - | 54nC @ 10V | - | - | |||
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VIEW |
2,908
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 25A TO-220AB | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | 60W (Tc) | N-Channel | 60V | 25A (Ta) | 18 mOhm @ 12.5A, 10V | - | 29nC @ 10V | - | - | |||
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VIEW |
1,179
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 40A TO-220AB | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 | - | N-Channel | 100V | 40A (Ta) | 15 mOhm @ 20A, 10V | 4V @ 1mA | 84nC @ 10V | 4000pF @ 10V | - | |||
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VIEW |
3,127
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 18A TO-220AB | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | - | N-Channel | 100V | 18A (Ta) | 42 mOhm @ 9A, 10V | - | 33nC @ 10V | - | - | |||
