- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
2,688
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V SO-8 | TrenchFET® Gen IV | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 4.5W (Tc) | N-Channel | - | 60V | 8.4A (Ta), 11.3A (Tc) | 19.5 mOhm @ 10A, 10V | 2.8V @ 250µA | 17nC @ 10V | 790pF @ 30V | 4.5V, 10V | ±20V | ||||
VIEW |
3,955
In-stock
|
Vishay Siliconix | MOSFET P-CHAN 30V SO-8 | TrenchFET® Gen IV | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.1W (Ta), 5.6W (Tc) | P-Channel | - | 30V | 20.5A (Ta), 27.8A (Tc) | 4.9 mOhm @ 15A, 10V | 2.2V @ 250µA | 84nC @ 10V | 3490pF @ 15V | 4.5V, 10V | +20V, -16V |