- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
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10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,071
In-stock
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Diodes Incorporated | MOSFET N-CH 25V .26A SOT-23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 320mW (Ta) | N-Channel | 25V | 260mA (Ta) | 4 Ohm @ 400mA, 4.5V | 1.1V @ 250µA | 0.36nC @ 4.5V | 42pF @ 10V | 2.7V, 4.5V | 8V | |||
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VIEW |
3,762
In-stock
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Diodes Incorporated | MOSFET P-CH 250V 0.26A DFN2020-6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 600mW (Ta) | P-Channel | 250V | 260mA (Ta) | 14 Ohm @ 200mA, 10V | 2.5V @ 1mA | 2.8nC @ 10V | 81pF @ 25V | 3.5V, 10V | ±40V | |||
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VIEW |
2,728
In-stock
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Infineon Technologies | MOSFET N-CH 240V 260MA SOT-89 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89-4-2 | 1W (Ta) | N-Channel | 240V | 260mA (Ta) | 6 Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5nC @ 10V | 97pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
627
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 260MA 3DFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | X1-DFN1006-3 | 430mW (Ta) | N-Channel | 60V | 260mA (Ta) | 3 Ohm @ 115mA, 10V | 2V @ 250µA | - | 25pF @ 25V | 5V, 10V | ±20V | |||
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VIEW |
3,682
In-stock
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Diodes Incorporated | MOSFET P-CH 250V 0.26A DFN2020-6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 600mW (Ta) | P-Channel | 250V | 260mA (Ta) | 14 Ohm @ 200mA, 10V | 2.5V @ 1mA | 2.8nC @ 10V | 81pF @ 25V | 3.5V, 10V | ±40V | |||
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VIEW |
1,358
In-stock
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Infineon Technologies | MOSFET P-CH 250V 260MA 4SOT223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V | |||
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VIEW |
2,559
In-stock
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ON Semiconductor | MOSFET N-CH 60V 260MA SOT-23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 300mW (Tj) | N-Channel | 60V | 260mA (Ta) | 2.5 Ohm @ 240mA, 10V | 2.5V @ 250µA | 0.81nC @ 5V | 26.7pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,511
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 260MA 3DFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | X1-DFN1006-3 | 430mW (Ta) | N-Channel | 60V | 260mA (Ta) | 3 Ohm @ 115mA, 10V | 2V @ 250µA | - | 25pF @ 25V | 5V, 10V | ±20V | |||
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VIEW |
3,769
In-stock
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ON Semiconductor | MOSFET N-CH 60V 0.26A SOT23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 300mW (Ta) | N-Channel | 60V | 260mA (Ta) | 2.5 Ohm @ 240mA, 10V | 2.6V @ 250µA | 0.81nC @ 5V | 40pF @ 25V | 4.5V, 10V | ±30V | |||
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VIEW |
3,085
In-stock
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Diodes Incorporated | MOSFET N-CH 25V .26A SOT-23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 320mW (Ta) | N-Channel | 25V | 260mA (Ta) | 4 Ohm @ 400mA, 4.5V | 1.1V @ 250µA | 0.36nC @ 4.5V | 27.9pF @ 10V | 2.7V, 4.5V | 8V |