Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFR3410TRRPBF
RFQ
VIEW
RFQ
2,415
In-stock
Infineon Technologies MOSFET N-CH 100V 31A DPAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 3W (Ta), 110W (Tc) N-Channel - 100V 31A (Tc) 39 mOhm @ 18A, 10V 4V @ 250µA 56nC @ 10V 1690pF @ 25V 10V ±20V
IRFR3410TRPBF
RFQ
VIEW
RFQ
3,987
In-stock
Infineon Technologies MOSFET N-CH 100V 31A DPAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 3W (Ta), 110W (Tc) N-Channel - 100V 31A (Tc) 39 mOhm @ 18A, 10V 4V @ 250µA 56nC @ 10V 1690pF @ 25V 10V ±20V
STL18NM60N
RFQ
VIEW
RFQ
3,073
In-stock
STMicroelectronics MOSFET N-CH 600V 6A POWERFLAT MDmesh™ II Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-PowerFlat™ HV PowerFlat™ (8x8) HV 3W (Ta), 110W (Tc) N-Channel - 600V 2.1A (Ta), 12A (Tc) 310 mOhm @ 6A, 10V 4V @ 250µA 35nC @ 10V 1000pF @ 50V 10V ±30V
IRFR3410TRLPBF
RFQ
VIEW
RFQ
678
In-stock
Infineon Technologies MOSFET N-CH 100V 31A DPAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 3W (Ta), 110W (Tc) N-Channel - 100V 31A (Tc) 39 mOhm @ 18A, 10V 4V @ 250µA 56nC @ 10V 1690pF @ 25V 10V ±20V