Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQT7N10TF
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ON Semiconductor MOSFET N-CH 100V 1.7A SOT-223 QFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2W (Tc) N-Channel - 100V 1.7A (Tc) 350 mOhm @ 850mA, 10V 4V @ 250µA 7.5nC @ 10V 250pF @ 25V 10V ±25V
SQ2309ES-T1_GE3
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941
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Vishay Siliconix MOSFET P-CHAN 60V SOT23 Automotive, AEC-Q101, TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236 (SOT-23) 2W (Tc) P-Channel - 60V 1.7A (Tc) 336 mOhm @ 3.8A, 10V 2.5V @ 250µA 8.5nC @ 10V 265pF @ 25V 4.5V, 10V ±20V
FQT7N10LTF
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856
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ON Semiconductor MOSFET N-CH 100V 1.7A SOT-223 QFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2W (Tc) N-Channel - 100V 1.7A (Tc) 350 mOhm @ 850mA, 10V 2V @ 250µA 6nC @ 5V 290pF @ 25V 5V, 10V ±20V