- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,621
In-stock
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Nexperia USA Inc. | MOSFET N-CH 80V 2.8A SOT1220 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-DFN2020MD (2x2) | 1.6W (Ta), 15.6W (Tc) | N-Channel | 80V | 2.8A (Ta) | 105 mOhm @ 2.8A, 10V | 2.7V @ 250µA | 14.9nC @ 10V | 504pF @ 40V | 4.5V, 10V | ±20V | ||||
VIEW |
3,809
In-stock
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Nexperia USA Inc. | MOSFET N-CH 80V 1.1A 3DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 400mW (Ta), 6.25W (Tc) | N-Channel | 80V | 1.1A (Ta) | 450 mOhm @ 1.1A, 10V | 2.7V @ 250µA | 4.5nC @ 10V | 130pF @ 40V | 4.5V, 10V | ±20V |