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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,895
In-stock
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NXP USA Inc. | MOSFET N-CH 80V 34A QFN3333 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 65W (Tc) | N-Channel | 80V | 34A (Tc) | 23 mOhm @ 10A, 10V | 4V @ 1mA | 21nC @ 10V | 1295pF @ 40V | 10V | ±20V | ||||
VIEW |
1,463
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 80V 34A SOP | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 61W (Tc) | N-Channel | 80V | 34A (Tc) | 8 mOhm @ 17A, 10V | 4V @ 500µA | 35nC @ 10V | 3000pF @ 40V | 10V | ±20V | ||||
VIEW |
2,031
In-stock
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Nexperia USA Inc. | MOSFET N-CH 80V 34A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 74W (Tc) | N-Channel | 80V | 34A (Tc) | 27.5 mOhm @ 5A, 10V | 4V @ 1mA | 20nC @ 10V | 1200pF @ 40V | 10V | ±20V |