Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 80V 55A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MZ DIRECTFET™ MZ 2.8W (Ta), 89W (Tc) N-Channel - 80V 55A (Tc) 15 mOhm @ 12A, 10V 4.9V @ 100µA 31nC @ 10V 1320pF @ 25V 10V ±20V
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Infineon Technologies MOSFET N-CH 80V 12A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MN DIRECTFET™ MN 2.8W (Ta), 89W (Tc) N-Channel - 80V 12A (Ta), 68A (Tc) 9.5 mOhm @ 12A, 10V 4.9V @ 150µA 50nC @ 10V 2060pF @ 25V 10V ±20V
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2,958
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Infineon Technologies MOSFET N-CH 80V 12A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MN DIRECTFET™ MN 2.8W (Ta), 89W (Tc) N-Channel - 80V 12A (Ta), 68A (Tc) 9.5 mOhm @ 12A, 10V 4.9V @ 150µA 50nC @ 10V 2060pF @ 25V 10V ±20V
IRF6646TRPBF
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615
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Infineon Technologies MOSFET N-CH 80V 12A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MN DIRECTFET™ MN 2.8W (Ta), 89W (Tc) N-Channel - 80V 12A (Ta), 68A (Tc) 9.5 mOhm @ 12A, 10V 4.9V @ 150µA 50nC @ 10V 2060pF @ 25V 10V ±20V
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Infineon Technologies MOSFET N-CH 80V 10A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 80V 10A (Ta) 13.4 mOhm @ 10A, 10V 4.9V @ 100µA 41nC @ 10V 1620pF @ 25V 10V ±20V
IRF7488TRPBF
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1,476
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Infineon Technologies MOSFET N-CH 80V 6.3A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 80V 6.3A (Ta) 29 mOhm @ 3.8A, 10V 4V @ 250µA 57nC @ 10V 1680pF @ 25V 10V ±20V
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Infineon Technologies MOSFET N-CH 80V 55A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MZ DIRECTFET™ MZ 2.8W (Ta), 89W (Tc) N-Channel - 80V 55A (Tc) 15 mOhm @ 12A, 10V 4.9V @ 100µA 31nC @ 10V 1320pF @ 25V 10V ±20V
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Infineon Technologies MOSFET N-CH 80V 9.3A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) N-Channel - 80V 9.3A (Tc) 15 mOhm @ 5.6A, 10V 4V @ 250µA 53nC @ 10V 1510pF @ 25V 10V ±20V
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Infineon Technologies MOSFET N-CH 80V 38A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 110W (Tc) N-Channel - 80V 38A (Tc) 29 mOhm @ 18A, 10V 4V @ 250µA 56nC @ 10V 1710pF @ 25V 10V ±20V