Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NTB65N02RT4
RFQ
VIEW
RFQ
3,310
In-stock
ON Semiconductor MOSFET N-CH 25V 7.6A D2PAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 1.04W (Ta), 62.5W (Tc) N-Channel - 25V 65A (Tc) 8.2 mOhm @ 30A, 10V 2V @ 250µA 9.5nC @ 4.5V 1330pF @ 20V 4.5V, 10V ±20V
STL65N3LLH5
RFQ
VIEW
RFQ
932
In-stock
STMicroelectronics MOSFET N-CH 30V 19A POWERFLAT6X5 STripFET™ V Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerFlat™ (6x5) 60W (Tc) N-Channel - 30V 65A (Tc) 5.8 mOhm @ 9.5A, 10V 1V @ 250µA 12nC @ 4.5V 1500pF @ 25V 4.5V, 10V ±22V