- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- FET Feature :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,806
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 2.9A SC70-6 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) | 1W (Ta) | N-Channel | - | 20V | 2.9A (Ta) | 70 mOhm @ 3.7A, 4.5V | 450mV @ 250µA (Min) | 8nC @ 4.5V | - | 1.8V, 4.5V | ±12V | |||
|
VIEW |
1,833
In-stock
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Infineon Technologies | MOSFET N-CH 60V 2.9A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.9A (Ta) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,859
In-stock
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Infineon Technologies | MOSFET N-CH 60V 2.9A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.9A (Ta) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,153
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 2.9A 8-DFN | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3020 (3x2) | 1.5W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.9A (Ta) | 95 mOhm @ 2.8A, 4.5V | 1.3V @ 250µA | - | 632pF @ 10V | 1.8V, 4.5V | ±12V | |||
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|
VIEW |
3,028
In-stock
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Infineon Technologies | MOSFET P-CH 60V 2.9A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,584
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.9A TSM | π-MOSVII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | - | 30V | 2.9A (Ta) | 83 mOhm @ 1.5A, 10V | 2.6V @ 1mA | 3.3nC @ 4V | 180pF @ 10V | 4V, 10V | ±20V | |||
