- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
2,186
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 4A 6-TSOP | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | Micro6™(TSOP-6) | 2W (Ta) | P-Channel | 30V | 4A (Ta) | 85 mOhm @ 4A, 10V | 1V @ 250µA | 17nC @ 10V | 535pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
888
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 4A 6-TSOP | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.14W (Ta) | P-Channel | 30V | 4A (Ta) | 48 mOhm @ 5.3A, 10V | 3V @ 250µA | 25nC @ 10V | - | 4.5V, 10V | ±20V | |||
|
VIEW |
3,588
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 4A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 4A (Ta) | 53 mOhm @ 3A, 10V | 1V @ 1mA | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 10V | ±12V | |||
